Interaction of Aluminum Oxide with Germanium during Thermal Annealing in Ar, N2/H2, O2, or H2O

被引：5
|
作者：
Radtke, C. [1 ]
Bom, N. M. [2 ]
Soares, G. V. [2 ]
Krug, C. [2 ]
Baumvol, I. J. R. [2 ,3 ]
机构：
[1] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil
[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509 Porto Alegre, RS, Brazil
[3] Univ Caxias, BR-95070 Caxias Do Sul, Brazil
来源：
PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 | 2011年 / 41卷 / 03期
关键词：
ATOMIC LAYER DEPOSITION; GE;
D O I：
10.1149/1.3633016
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Five-nanometer-thick Al2O3 films were deposited on Ge substrates by reactive sputtering and submitted to post-deposition annealings (PDAs) in argon, forming gas, oxygen, or water vapor at 350 or 500 degrees C for 30 min. Photoelectron spectroscopy evidenced that Ge was oxidized during the deposition process. Thermal annealing in argon or forming gas reduced the amount of oxidized Ge. Oxygen and water strongly interacted with the Ge substrate. Particularly for water at 500 degrees C, ion scattering analyses evidenced the presence of Ge throughout the Al2O3 layer and on the sample surface. This was attributed to the formation and desorption of GeO from the dielectric/Ge interface.
引用
收藏
页码：21 / 28
页数：8
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