Novel aspects of the growth of nitrides by MOVPE

被引：16

作者：

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 32期

关键词：

D O I：

10.1088/0953-8984/13/32/304

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent topics in the growth of group III nitrides by MOVPE are reviewed. The process of low-temperature deposition of the buffer layer and the effect of the low-temperature-deposited interlayer on the growth of AlGaN are discussed. The growth of AlGaN on grooved GaN and on substrates is reviewed. Finally, recent topics on the growth of In-containing alloys in terms of the future aspects of new devices are presented.

引用

页码：6935 / 6944

页数：10

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