Comprehensive analysis of electrically-pumped GaSb-based VCSELs

被引:18
作者
Arafin, S. [1 ]
Bachmann, A. [1 ]
Vizbaras, K. [1 ]
Hangauer, A. [1 ]
Gustavsson, J. [2 ]
Bengtsson, J. [2 ]
Larsson, A. [2 ]
Amann, M. -C. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源
OPTICS EXPRESS | 2011年 / 19卷 / 18期
关键词
ABSORPTION-SPECTROSCOPY; THERMAL-CONDUCTIVITY; CAVITY;
D O I
10.1364/OE.19.017267
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications. (C) 2011 Optical Society of America
引用
收藏
页码:17267 / 17282
页数:16
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