Atomic processes in semiconductor crystals

被引:3
作者
Smirnov, LS [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
关键词
Radiation; Magnetic Material; External Factor; Electromagnetism; Atomic Level;
D O I
10.1134/1.1403560
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The formation of a new field in the radiation physics of semiconductors and semiconductor technology under the general guidance and with the direct participation of the late A. V. Rzhanov is reviewed historically. This line of research gave rise to a multitude of practical applications; however, most importantly, it forced scientists to radically change the established concepts of reactions in semiconductor crystals by taking into account the mobile defect-impurity subsystem susceptible to external factors. The concepts developed form the basis for considering the processes at the atomic level, especially during the formation and modification of active clusters and nanoobjects. (C) 2001 MAIK "Nauka/ Interperiodica".
引用
收藏
页码:985 / 987
页数:3
相关论文
共 5 条
[1]  
Aseev A., 1994, CLUSTERS INTERSTITIA
[2]  
BOLOTOV VV, 1980, PROBLEMS SEMICONDUCT
[3]  
BOLOTOV VV, 1977, PHYSICAL PROCESSES I
[4]  
Dvurechenskii A.V., 1982, Pulsed Annealing of Semiconductors Materials
[5]  
Smirnov LS., 1981, DOPING SEMICONDUCTOR, P175