Enhanced degradation of nMOSFETS under dynamic stress due to the broad distribution of interface states

被引：0
作者：
Hwang, H
机构：
[1] ULSI Laboratory, LG Semicon Co., Cheongju, 360-480, # 1, Hyangjeong-dong Hungduk-gu
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 01期
关键词：
D O I：
10.1016/S0038-1101(96)00094-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：125 / 126
页数：2
相关论文
共 5 条
[1]   LATERAL DISTRIBUTION OF HOT-CARRIER-INDUCED INTERFACE TRAPS IN MOSFETS [J].
ANCONA, MG ;
SAKS, NS ;
MCCARTHY, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2221-2228
[2]   THE GENERATION AND CHARACTERIZATION OF ELECTRON AND HOLE TRAPS CREATED BY HOLE INJECTION DURING LOW GATE VOLTAGE HOT-CARRIER STRESSING OF N-MOS TRANSISTORS [J].
DOYLE, BS ;
BOURCERIE, M ;
BERGONZONI, C ;
BENECCHI, R ;
BRAVIS, A ;
MISTRY, KR ;
BOUDOU, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (08) :1869-1876
[3]  
DUVVURY C, 1987, IEEE P IRPS 87, P201
[4]   HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].
HU, CM ;
TAM, SC ;
HSU, FC ;
KO, PK ;
CHAN, TY ;
TERRILL, KW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385
[5]   AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J].
TAKEDA, E ;
SUZUKI, N .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :111-113
1