Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

被引：19
|
作者：
Park, Woojin [1 ]
Min, Jung-Wook [2 ]
Shaikh, Sohail Faizan [1 ]
Hussain, Muhammad Mustafa [1 ]
机构：
[1] King Abdullah Univ Sci & Technol, Elect Engn Comp Elect Math Sci & Engn Div, Integrated Nanotechnol Lab, Integrated Disrupt Elect Applicat IDEA Lab, Thuwal 239666900, Saudi Arabia
[2] King Abdullah Univ Sci & Technol, Photon Lab, Elect Engn Comp Elect Math Sci & Engn Div, Thuwal 239666900, Saudi Arabia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 12期
关键词：
contacts; field-effect transistors; interfaces; MoS2; thin films; TiO2; THIN-FILM TRANSISTORS; NONVOLATILE MEMORY; INTEGRATED-CIRCUITS; REDUCTION; IDENTIFICATION; ENHANCEMENT; CHANNEL; CELLS; WS2;
D O I：
10.1002/pssa.201700534
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (V-TH) shift and reduced series resistance (R-SD) were simultaneously achieved.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts
    Du, Yuchen
    Yang, Lingming
    Zhang, Jingyun
    Liu, Han
    Majumdar, Kausik
    Kirsch, Paul D.
    Ye, Peide D.
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) : 599 - 601
  • [2] The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
    Illarionov, Yury Yu
    Rzepa, Gerhard
    Waltl, Michael
    Knobloch, Theresia
    Grill, Alexander
    Furchi, Marco M.
    Mueller, Thomas
    Grasser, Tibor
    2D MATERIALS, 2016, 3 (03):
  • [3] Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors
    Choi, Homin
    Moon, Byoung Hee
    Kim, Jung Ho
    Yun, Seok Joon
    Han, Gang Hee
    Leep, Sung-gyu
    Gul, Hamza Zad
    Lee, Young Hee
    ACS NANO, 2019, 13 (11) : 13169 - 13175
  • [4] Improving Contact Resistance in MoS2 Field Effect Transistors
    English, Chris D.
    Shine, Gautam
    Dorgan, Vincent E.
    Saraswat, Krishna C.
    Pop, Eric
    2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2014, : 193 - +
  • [5] Annealed Ag contacts to MoS2 field-effect transistors
    Abraham, Michael
    Mohney, Suzanne E.
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (11)
  • [6] Emission of THz waves in MoS2 field-effect transistors
    Sun, Zongyao
    Zhang, Liping
    Li, Jiani
    Zhang, Meilin
    Su, Junyan
    PHYSICS OF PLASMAS, 2025, 32 (01)
  • [7] Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
    Kaushik, Naveen
    Karmakar, Debjani
    Nipane, Ankur
    Karande, Shruti
    Lodha, Saurabh
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (01) : 256 - 263
  • [8] Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors
    Pelella, Aniello
    Kharsah, Osamah
    Grillo, Alessandro
    Urban, Francesca
    Passacantando, Maurizio
    Giubileo, Filippo
    Iemmo, Laura
    Sleziona, Stephan
    Pollmann, Erik
    Madauss, Lukas
    Schleberger, Marika
    Di Bartolomeo, Antonio
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (36) : 40532 - 40540
  • [9] On Monolayer MoS2 Field-Effect Transistors at the Scaling Limit
    Liu, Leitao
    Lu, Yang
    Guo, Jing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (12) : 4133 - 4139
  • [10] Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS2 field-effect transistors
    Pak, Jinsu
    Cho, Kyungjune
    Kim, Jae-Keun
    Jang, Yeonsik
    Shin, Jiwon
    Kim, Jaeyoung
    Seo, Junseok
    Chung, Seungjun
    Lee, Takhee
    NANO FUTURES, 2019, 3 (01)
12345