TiAl-based Ohmic Contacts to p-type 4H-SiC

被引：0
作者：
Martychowiec, Agnieszka [1 ]
Kwietniewski, Norbert [1 ]
Kondracka, Kinga [1 ]
Werbowy, Aleksander [1 ]
Sochacki, Mariusz [1 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS | 2021年 / 67卷 / 03期
关键词：
ohmic contact; SiC; silicon carbide; TiAl; TEMPERATURE; RESISTANCE;
D O I：
10.24425/ijet.2021.137834
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800 degrees C - 1100 degrees C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000 degrees C or higher.
引用
收藏
页码：459 / 464
页数：6
相关论文
共 19 条
[1]  
Abi-Tannous T., 2016, Materials Science Forum, V858, P553, DOI 10.4028/www.scientific.net/MSF.858.553
[2]   A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase [J].
Abi-Tannous, Tony ;
Soueidan, Maher ;
Ferro, Gabriel ;
Lazar, Mihai ;
Raynaud, Christophe ;
Toury, Berangere ;
Beaufort, Marie-France ;
Barbot, Jean-Francois ;
Dezellus, Olivier ;
Planson, Dominique .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (06) :2462-2468
[3]   Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide [J].
Buchholt, K. ;
Ghandi, R. ;
Domeij, M. ;
Zetterling, C-M. ;
Lu, J. ;
Eklund, P. ;
Hultman, L. ;
Spetz, A. Lloyd .
APPLIED PHYSICS LETTERS, 2011, 98 (04)
[4]   An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes [J].
Han, Chao ;
Zhang, Yuming ;
Song, Qingwen ;
Zhang, Yimen ;
Tang, Xiaoyan ;
Yang, Fei ;
Niu, Yingxi .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (04) :1223-1229
[5]  
Huang Yaren, 2019, Materials Science Forum, V963, P553, DOI 10.4028/www.scientific.net/MSF.963.553
[6]   500 °C Bipolar Integrated OR/NOR Gate in 4H-SiC [J].
Lanni, Luigia ;
Malm, Bengt Gunnar ;
Ostling, Mikael ;
Zetterling, Carl-Mikael .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (09) :1091-1093
[7]   THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE [J].
MARLOW, GS ;
DAS, MB .
SOLID-STATE ELECTRONICS, 1982, 25 (02) :91-94
[8]  
Ohshima T., 2012, PHYS TECHNOLOGY SILI, DOI [10.5772/51371, DOI 10.5772/51371]
[9]   Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide [J].
Rambach, M. ;
Bauer, A. J. ;
Ryssel, H. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07) :1315-1326
[10]   Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes [J].
Rao, Sandro ;
Pangallo, Giovanni ;
Della Corte, Francesco G. .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (11) :1205-1208
12