Energy location of light-induced ESR centers in undoped a-Si:H

We report the light intensity dependence of (29)Si hyperfine (hf) structures of light-induced electron spin resonance (LESR) in undoped a-Si:H in order to detect changes of electronic structures of the g = 2.004 center against the shift of energy locations of g = 2.004 electrons. Within the light intensity range from 0.004 to 450 mW/cm(2), (29)Si hf structures of g = 2.004 were almost unchanged, which indicates that a magnitude of the spatial localization of g = 2.004 electrons is almost constant. Based on the experimental results, we discuss the energetic distribution of g = 2.004 electrons. (C) 1998 Elsevier Science B.V. All rights reserved.