TCAD-Based Simulation Method for the Electrolyte-Insulator-Semiconductor Field-Effect Transistor

被引：28

作者：

Choi, Bongsik ^{[1
]}

Lee, Jieun ^{[1
]}

Yoon, Jinsu ^{[1
]}

Ahn, Jae-Hyuk ^{[2
]}

Park, Tae Jung ^{[3
]}

Kim, Dong Myong ^{[1
]}

Kim, Dae Hwan ^{[1
]}

Choi, Sung-Jin ^{[1
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[2] Korea Adv Inst Sci & Technol, Mobile Sensor & IT Convergence Ctr, Taejon 305701, South Korea

[3] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Biosensor; Debye length; electrolyte-insulator-semiconductor field-effect transistor (EISFET); ion-sensitive field-effect transistor (ISFET); pH sensor; screening effect; silicon nanowire (SiNW); technology computer-aided design (TCAD); SENSORS; DESIGN;

D O I：

10.1109/TED.2015.2395875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simulation method for the electrolyte-insulator-semiconductor field-effect transistor (EISFET)-type sensor is proposed based on a well-established commercialized semiconductor 3-D technology computer-aided design simulator. The proposed method relies on the fact that an electrolyte can be described using a modified intrinsic semiconductor material because of the similarity between the electrolyte and the intrinsic semiconductor. The electrical double layer of the electrolyte is characterized in the simulation using the Gouy-Chapman-Stern model. Using the proposed simulation method, we extract the Debye lengths depending on phosphate buffered saline solutions with various concentrations and demonstrate that it is possible to simulate the screening effect. Furthermore, we investigate the responses of the EISFET-type silicon nanowire pH sensor based on our simulation method, which shows good agreement with the reported Nernst limit value.

引用

页码：1072 / 1075

页数：4

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