Analysis and optimum design on GeSi/Si MQW optical waveguide and absorbtion layer

被引：0

作者：

Li, N ^{[1
]}

Lu, W

Shen, XC

Li, GZ

Liu, EK

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Xian Jiao Tong Univ, Dept Elect Engn, Xian 710049, Shaaxi, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 1998年 / 17卷 / 03期

关键词：

GeSi/Si MQW; optical waveguide; absorption layer;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

According to the field distribution function and mode property equation in MQW optical waveguide, the influence of Ge composition, period number and depth on plate waveguide mode property was analyzed. The waveguide was formed by GeSi/Si MQW core and Si cover. GeSi/Si MQW absorber layer structure was optimally designed.

引用

页码：203 / 208

页数：6

共 6 条

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