N-type field-effect transistors based on layered crystalline donor-acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors

被引:86
作者
Tsutsumi, Jun'ya [1 ]
Matsuoka, Satoshi [1 ]
Inoue, Satoru [1 ]
Minemawari, Hiromi [1 ]
Yamada, Toshikazu [1 ]
Hasegawa, Tatsuo [1 ,2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
基金
日本学术振兴会;
关键词
CHARGE-TRANSFER; INJECTIONS; MORPHOLOGY;
D O I
10.1039/c4tc02481h
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the structural, electronic, and field-effect transistor characteristics of a series of molecular donor-acceptor charge-transfer (CT) compounds composed of 2,7-dialkyl[1]benzothieno[3,2-b][1] benzothiophenes (diC(n)-BTBT; n = 4, 8, and 12) as donors and optionally fluorinated derivatives of tetracyanoquinodimethane (F(m)TCNQ; m = 0, 2, and 4) as acceptors. (diC(n)-BTBT)(F(m)TCNQ) form isomorphous layered crystalline structures consisting of alternating p-conjugated layers and alkyl chain layers, irrespective of the length of the alkyl chains. The compounds exhibit unique double-peaked CT absorption-band features that are polarized along the donor-acceptor interaction. Field-effect transistors based on these single crystals show a relatively high field-effect mobility (0.4 cm(2) V-1 s(-1)), the p- and n-type operation of which can be tuned by altering the fluorine substitution in TCNQ.
引用
收藏
页码:1976 / 1981
页数:6
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