Electronic Structures of Well-Aligned Er-Doped ZnO Nanorod Arrays

被引：7

作者：

Chen, Cheng-Ying

Lai, Kun-Yu

Lo, Jian-Wei

Lin, Chin-An

Chiu, Shu-Hsien

Chao, Yen-Chun

He, Jr-Hau ^{[1
]}

机构：

[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 12期

关键词：

Er-Doped ZnO; Infrared Emission; Nanorod Arrays; XANES; XAFS; Optical Activation; X-RAY-ABSORPTION; SCANNING PHOTOELECTRON MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; OPTICALLY-ACTIVE CENTER; OXIDE THIN-FILMS; LUMINESCENT PROPERTIES; ACTIVATION PROCESS; LOCAL ENVIRONMENT; FINE-STRUCTURE; EMISSION;

D O I：

10.1166/jnn.2011.4093

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electronic structures of well-aligned Er-doped ZnO (ZnO:Er) nanorod arrays (NRAs) synthesized by a solution-based hydrothermal process were characterized by high-resolution transmission electron microscopy (HRTEM) and X-ray absorption fine structure (XAFS). HRTEM and angular dependent X-ray absorption near-edge structure analysis at O K and Zn L-3 edges indicates that the spontaneous polarization is along the [000 (1) over bar] direction. The analysis of Er L-3-edge XAFS demonstrates that the local structure around Er in the ZnO:Er NRAs was transformed from O-h to C-4v after annealing.

引用

收藏

页码：10615 / 10619

页数：5

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