The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors

被引：16

作者：

Ko, Youngbin ^{[1
]}

Bang, Seokhwan ^{[1
]}

Lee, Seungjun ^{[1
]}

Park, Soyeon ^{[1
]}

Park, Joohyun ^{[1
]}

Jeon, Hyeongtag ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 10-11期

关键词：

atomic layer deposition; thin film transistors; passivation; IGZO; HfO2; Al2O3; ROOM-TEMPERATURE; DEPOSITION; AL2O3; HYDROGEN; PLASMA;

D O I：

10.1002/pssr.201105340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the effects of a HfO2 buffer layer between an Al2O3 passivation layer and an indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) were investigated to enhance the environmental stability and electrical properties of the IGZO TFT. When applying the HfO2 buffer layer, the formation of HfAlxOy at the Al2O3/HfO2 interface reduces the water vapor transmission rate (WVTR) due to densification of the passivation layer. Consequently, by adding the HfO2 buffer layer, WVTR of the TFT was highly improved; moreover, changes in the electrical characteristics can be prevented compared to both the non-passivated and Al2O3-passivated TFTs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：403 / 405

页数：3

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