MORPHOLOGICAL EVOLUTION OF MoS2 NANOSHEETS BY CHEMICAL VAPOR DEPOSITION

被引：0

作者：

Wang, X. ^{[1
]}

Zhang, Y. P. ^{[1
]}

Chen, Z. Q. ^{[1
]}

机构：

[1] Southwest Univ, Fac Mat & Energy, Chongqing 400715, Peoples R China

来源：

CHALCOGENIDE LETTERS | 2016年 / 13卷 / 08期

关键词：

Transition Metal Dichalcogenides; MoS2; Nanosheets; Chemical Vapor Deposition; ATOMIC LAYERS; EXFOLIATION; MONOLAYER; GROWTH;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MoS2 nanosheets are synthesized using a low-pressure chemical vapor deposition (CVD) system at elevated temperature on Si substrates with S and MoO3 power as its precursors. SEM and XRD measurements indicate that the morphology and structure of the deposited MoS2 nanosheets are highly dependent on the spatial location of silicon substrate, with the preferred crystalline orientation varied from (108) to (201) as the sample further from the sulphur source. XPS shows that the MoO2 constituent increases slightly as the distance further away from the sulphur source. The nanostructured MoS2 film exhibits strong photoluminescence in the visible range. This paper may provide new insight into our understanding the kinetic dynamics related to the MoS2 growth.

引用

页码：351 / 356

页数：6

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