InGaN-LD-Pumped Continuous-Wave Deep Red Laser at 670 nm in Pr3+:LiYF4 Crystal

被引：15

作者：

Qu, Biao ^{[1
]}

Xu, Bin ^{[1
]}

Luo, Saiyu ^{[1
]}

Cheng, Yongjie ^{[1
]}

Xu, Huiying ^{[1
]}

Cai, Zhiping ^{[1
]}

Camy, Patrice ^{[2
]}

Doualan, Jean-Louis ^{[2
]}

Moncorge, Richard ^{[2
]}

机构：

[1] Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China

[2] Univ Caen, Ecole Natl Super Ingenieurs Caen, Ctr Rech Ions Mat & Photon, Commissariat Energie Atom,CNRS, F-14032 Caen, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Diode pumped; Pr3+:LiYF4 crystal; deep red laser; FLUORIDE-CRYSTALS; OPERATION; EMISSION;

D O I：

10.1109/LPT.2014.2365577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first laser operation at pi-polarized 670.34-nm deep red laser in a 2-W InGaN-LD-pumped Pr3+:LiYF4 (Pr:YLF) crystal with the aid of a 0.1-mm intracavity etalon, to the best of our knowledge. The maximum output power of this laser emission was up to 87.6 mW with slope efficiency of similar to 11.9% with respect to the absorbed pump power. The beam propagation factors in x-direction and y-direction were measured to be 1.49 and 1.05, respectively.

引用

页码：333 / 335

页数：3

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