Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

被引：6
|
作者：
Sampedro, C [1 ]
Gamiz, F [1 ]
Godoy, A [1 ]
Prunnila, M [1 ]
Ahopelto, J [1 ]
机构：
[1] Univ Granada, Dept Elect & Tecnol Comp, Granada 18071, Spain
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期
基金：
芬兰科学院;
关键词：
D O I：
10.1063/1.1929085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length. (c) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [21] Efficient full-band Monte Carlo simulation of silicon devices
    Jungemann, C
    Keith, S
    Bartels, M
    Meinerzhagen, B
    IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (06) : 870 - 879
  • [22] MONTE-CARLO SIMULATION OF THE PHOTOELECTRON CROSSTALK IN SILICON IMAGING DEVICES
    LAVINE, JP
    CHANG, WC
    ANAGNOSTOPOULOS, CN
    BURKEY, BC
    NELSON, ET
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2087 - 2091
  • [23] MONTE-CARLO SIMULATION OF THE PHOTOELECTRON CROSSTALK IN SILICON IMAGING DEVICES
    LAVINE, JP
    CHANG, WC
    ANAGNOSTOPOULOS, CN
    BURKEY, BC
    NELSON, ET
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) : 531 - 535
  • [24] High-voltage, double-gate devices on silicon-on-insulator
    Zingg, RP
    MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 461 - 468
  • [25] Image and exchange-correlation effects in double gate silicon-on-insulator transistors
    Gámiz, F
    Cartujo-Cassinello, P
    Jiménez-Molinos, F
    Carceller, JE
    Cartujo, P
    MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) : 374 - 378
  • [26] Monte Carlo simulation of band-to-band tunneling in silicon devices
    Xia, Zhiliang
    Du, Gang
    Song, Yuncheng
    Wang, Jian
    Liu, Xiaoyan
    Kang, Jinfeng
    Han, Ruqi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2023 - 2026
  • [27] Electron mobility in double gate silicon on insulator transistors:: Symmetric-gate versus asymmetric-gate configuration
    Gámiz, F
    Roldán, JB
    Godoy, A
    Cartujo-Cassinello, P
    Carceller, JE
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) : 5732 - 5741
  • [28] Monte Carlo simulation of electron mobility in double gate SOI-MOSFETs.
    Gamiz, F
    Roldan, JB
    LopezVillanueva, JA
    Carceller, JE
    PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 233 - 238
  • [29] Monte Carlo simulation of nanoelectronic devices
    Gamiz, F.
    Godoy, A.
    Donetti, L.
    Sampedro, C.
    Roldan, J. B.
    Ruiz, F.
    Tienda, I.
    Rodriguez, N.
    Jimenez-Molinos, F.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2009, 8 (3-4) : 174 - 191
  • [30] Monte Carlo Analysis of the Dynamic Behavior of InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization
    Vasallo, B. G.
    Gonzalez, T.
    Pardo, D.
    Mateos, J.
    ACTA PHYSICA POLONICA A, 2011, 119 (02) : 193 - 195
12345