Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

被引：6

作者：

Sampedro, C ^{[1
]}

Gamiz, F ^{[1
]}

Godoy, A ^{[1
]}

Prunnila, M ^{[1
]}

Ahopelto, J ^{[1
]}

机构：

[1] Univ Granada, Dept Elect & Tecnol Comp, Granada 18071, Spain

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期

基金：

芬兰科学院;

关键词：

D O I：

10.1063/1.1929085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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