Band structure calculations of Cu(In1-xGax)Se2

被引：15
作者：
Chandramohan, M. [1 ]
Velumani, S. [2 ]
Venkatachalam, T. [3 ]
机构：
[1] Pk Coll Engn & Technol, Dept Phys, Coimbatore 641659, Tamil Nadu, India
[2] IPN, CINVESTAV, Mexico City 07360, DF, Mexico
[3] Coimbatore Inst Technol, Dept Phys, Coimbatore 14, Tamil Nadu, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 174卷 / 1-3期
关键词：
Band structure of semiconductors; CIGS; Effective masses; Density of states; EFFICIENCY;
D O I：
10.1016/j.mseb.2010.03.043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
First principles density calculations of the band structure, and density of states of the Cu(In1-xGax)Se-2 in the chalcopyrite type structure have been carried out using the density functional theory. The relationship between the band gap and chemical composition in the structure is discussed. The effective masses of the electrons and holes in the different composition crystals are reported. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：200 / 204
页数：5
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