Chiral topological excitons in a Chern band insulator

被引:11
作者
Chen, Ke
Shindou, Ryuichi [1 ]
机构
[1] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
关键词
TRANSITION-METAL DICHALCOGENIDES; QUANTIZED HALL CONDUCTANCE; CARBON NANOTUBES; OPTICAL-SPECTRUM; MONOLAYER WSE2; QUANTUM DOTS; EDGE STATES; SEMICONDUCTOR; LIGHT; SPIN;
D O I
10.1103/PhysRevB.96.161101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A family of semiconductors called Chern band insulators are shown to host exciton bands with nonzero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as +/- 1 and +/- 2 in the electronic Chern insulator phase. The nontrivial topology can be experimentally observed both by a nonlocal optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells, and (Bi,Sb)(2)Te-3 thin films are promising candidates for a platform of topological excitonics.
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页数:5
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