Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes

被引：36

作者：

Moon, Dong-Il ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Kim, Chung-Jin ^{[1
]}

Kim, Jee-Yeon ^{[1
]}

Lee, Jin-Seong ^{[1
]}

Oh, Jae-Sub ^{[2
]}

Lee, Gi-Sung ^{[2
]}

Park, Yun-Chang ^{[2
]}

Hong, Dae-Won ^{[2
]}

Lee, Dong-Wook ^{[2
]}

Kim, Young-Su ^{[2
]}

Kim, Jeoung-Woo ^{[2
]}

Han, Jin-Woo ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Natl Nanofab Ctr, Taejon 305806, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

关键词：

All-around gate (AAG); Bosch process; bulk MOSFET; deep reactive-ion etch; gate-all-around; plasma etching; short-channel effects (SCEs); silicon nanowire (SiNW); TRANSISTORS;

D O I：

10.1109/LED.2011.2106758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gate length of 25 nm and a silicon nanowire (SiNW) with a width of 6 nm and a height of 10 nm fully surrounded by a gate are demonstrated. A suspended SiNW, which is fully depleted, is fabricated on a bulk substrate by employing the deep reactive-ion etching process known as the Bosch process. The electrical characteristics and short-channel effects (SCEs) of the SiNW MOSFETs with all-around gates are presented. The fabricated devices show excellent immunity against SCEs despite their being built on a bulk substrate and having gate lengths scaled down to the 25-nm regime. Improved electrostatic characteristics that suppress the SCEs are shown when the dimension of the SiNW is reduced.

引用

页码：452 / 454

页数：3

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