A Variation-Tolerant, Sneak-Current-Compensated Readout Scheme for Cross-Point Memory Based on Two-Port Sensing Technique

被引:7
作者
Bae, Woorham [1 ]
Yoon, Kyung Jean [2 ]
Song, Taeksang [1 ,3 ]
Nikolic, Borivoje [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Intel Corp, Nonvolatile Solut Grp, Santa Clara, CA 95054 USA
[3] SK Hynix Amer, DRAM Design Div, San Jose, CA 95134 USA
关键词
Cross-point memory; readout scheme; sneak current; threshold switch; two-port readout;
D O I
10.1109/TCSII.2018.2868460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A variation-tolerant and sneak-current-free readout technique for cross-point non-volatile memory is presented. The proposed readout circuit has a sneak current compensation port, which collects sneak current information from multiple unselected cells, and efficiently cancels it out without delay and area overhead. In addition, this scheme averages out the random mismatches in the unselected cells so that the variation in sneak current does not affect the random read-current distribution. The proposed technique is verified using a generic device model, and the results show that the sneak current is completely compensated without sacrificing variation of the sensing current.
引用
收藏
页码:1839 / 1843
页数:5
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