Numerical approximation of free boundary problem by variational inequalities - Application to semiconductor devices

被引：0

作者：

Cecchi, MM ^{[1
]}

Russo, R ^{[1
]}

机构：

[1] Univ Padua, Dipartimento Matemat Pura & Applicata, I-35131 Padua, Italy

来源：

VARIATIONAL ANALYSIS AND APPLICATIONS | 2005年 / 79卷

关键词：

D O I：

暂无

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In this paper we treat problem arasing in sermiconductor theory from a mathematical and numerical point of view, in particular we consider a boundary value problem with unknown interfaces arising by the determination of the depletion layer in the most basic semiconductor device namely the p-n junction diode. We present the numerical approximation of free boundary problem with double obstacle treated with quasi-variational inequalities. We deal with the L-infinity convergence of the standard finite element approximation of the system of quasi-variational inequalities.

引用

页码：697 / 722

页数：26

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