Impact of pocket implantation on low frequency noise performances in MOSFET devices

被引：0

作者：

Blanc, C. ^{[1
]}

Rochereau, K. ^{[1
]}

Bordez, S. ^{[1
]}

机构：

[1] Freescale Semicond, 850 Rue Jean Monnet, F-38920 Crolles, France

来源：

NOISE AND FLUCTUATIONS | 2007年 / 922卷

关键词：

1/f noise; Flicker noise; low frequency noise; MOSFET; pocket implantation; oxide traps; degradation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this work is to evaluate the impact on low frequency noise performances due to pocket implantation. Low frequency noise measurements have been done on different gate lengths in a range of 0.04 to 10 gm and 10 gm for gate width. Different pocket implantations have been investigated: high pocket implantation, standard pocket implantation and no pocket implantation. All measurements have been done on 30 different dies on all a wafer. An unexpected degradation of low frequency noise has been observed for long gate length probably due to pocket implantation which created additional oxide traps density.

引用

页码：137 / +

页数：2