Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices

被引：10

作者：

Xu, Zheng ^{[1
]}

Mandal, Saptarshi ^{[2
]}

Gao, Jianyi ^{[1
]}

Surdi, Harshad ^{[1
]}

Li, Wenwen ^{[1
]}

Yamaoka, Yuya ^{[3
]}

Piao, Guanxi ^{[3
]}

Tabuchi, Toshiya ^{[3
]}

Li, Haoran

Matsumoto, Koh ^{[3
]}

Chowdhury, Srabanti ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Intel Corp, Pathfinding Grp, Hillsboro, OR 97124 USA

[3] Taiyo Nippon Sanso Corp, Tsukuba, Ibaraki 3002611, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 12期

基金：

美国国家科学基金会;

关键词：

Channel thermal resistance; high-electron mobility transistors (HEMTs); current aperture vertical electron transistor (CAVET); self-heating; ALGAN/GAN HEMTS; TEMPERATURE;

D O I：

10.1109/TED.2018.2875077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple electrical method to extract device channel thermal resistance in transistors is presented here. The method compares the dc to discrete-pulsed characteristics and estimates the effective increase in channel temperature under dc biasing conditions. Using the discrete-pulsed I versus t method, the self-heating of the device is effectively eliminated, which helps avoiding the underestimation of the device channel thermal resistance, therefore, making it possible to perform thermal measurements at the high power operation. This technique was applied to lateral GaN HEMTs with three different substrates as well as vertical GaN current aperture vertical electron transistor (CAVET) on sapphire, which proved its sensitivity and validity for different device structures and geometries.

引用

页码：5301 / 5306

页数：6

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