External cavity tunable type-I diode laser with continuous-wave singlemode operation at 3.24 μm

被引：8
作者：
Gupta, J. A. [1 ]
Ventrudo, B. F. [1 ]
Waldron, P. [1 ]
Barrios, P. J. [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 17期
关键词：
D O I：
10.1049/el.2010.1790
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A tunable external cavity laser (ECL) near 3.24 mu m was developed using semiconductor laser gain chips based on GaSb. The type-1 interband laser diodes were grown by molecular beam epitaxy using 17 nm InGaAsSb compressively-strained quantum wells with 30 nm AlInGaAsSb quinary barriers for improved hole confinement. In continuous-wave operation with a diode temperature of 10 degrees C, the ECLs produce up to 1.8 mW of singlemode output power with a tuning range of 60 nm. The devices are tunable through the fundamental nu(3) vibrational absorption features of methane gas, providing a platform for highly-sensitive detection of trace hydrocarbons.
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收藏
页码：1218 / U76
页数：2
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