External cavity tunable type-I diode laser with continuous-wave singlemode operation at 3.24 μm

被引：8

作者：

Gupta, J. A. ^{[1
]}

Ventrudo, B. F. ^{[1
]}

Waldron, P. ^{[1
]}

Barrios, P. J. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 17期

关键词：

D O I：

10.1049/el.2010.1790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A tunable external cavity laser (ECL) near 3.24 mu m was developed using semiconductor laser gain chips based on GaSb. The type-1 interband laser diodes were grown by molecular beam epitaxy using 17 nm InGaAsSb compressively-strained quantum wells with 30 nm AlInGaAsSb quinary barriers for improved hole confinement. In continuous-wave operation with a diode temperature of 10 degrees C, the ECLs produce up to 1.8 mW of singlemode output power with a tuning range of 60 nm. The devices are tunable through the fundamental nu(3) vibrational absorption features of methane gas, providing a platform for highly-sensitive detection of trace hydrocarbons.

引用

页码：1218 / U76

页数：2

共 8 条

[1] Laser Diodes for Gas Sensing Emitting at 3.06μm at Room Temperature [J].

Belahsene, Sofiane ;

Naehle, Lars ;

Fischer, Marc ;

Koeth, Johannes ;

Boissier, Guilhem ;

Grech, Pierre ;

Narcy, Gregoire ;

Vicet, Aurore ;

Rouillard, Yves .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (15) :1084-1086

[2] Widely tunable GaSb-based external cavity diode laser emitting around 2.3 μm [J].

Geerlings, E. ;

Rattunde, M. ;

Schmitz, J. ;

Kaufel, G. ;

Zappe, H. ;

Wagner, J. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) :1913-1915

[3] Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers -: art. no. 241104 [J].

Grau, M ;

Lin, C ;

Dier, O ;

Lauer, C ;

Amann, MC .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[4] Room-temperature continuous-wave operation of type-I GaSb-based lasers at 3.1 μm [J].

Gupta, J. A. ;

Barrios, P. J. ;

Aers, G. C. ;

Waldron, P. ;

Storey, C. .

ELECTRONICS LETTERS, 2009, 45 (16) :835-836

[5] Tunable-diode-laser spectroscopy of C2H2 using a 3.03 μm GaInAsSb/AlGaInAsSb distributed-feedback laser [J].

Kluczynski, Pawel ;

Lundqvist, Stefan ;

Belahsene, Sofiane ;

Rouillard, Yves .

OPTICS LETTERS, 2009, 34 (24) :3767-3769

[6] SYNCHRONOUS CAVITY MODE AND FEEDBACK WAVELENGTH SCANNING IN DYE-LASER OSCILLATORS WITH GRATINGS [J].

MCNICHOLL, P ;

METCALF, HJ .

APPLIED OPTICS, 1985, 24 (17) :2757-2761

[7] GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power -: art. no. 081115 [J].

Rattunde, M ;

Schmitz, J ;

Kaufel, G ;

Kelemen, M ;

Weber, J ;

Wagner, J .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[8] Continuous wave operation of diode lasers at 3.36 μm at 12 °C [J].

Shterengas, L. ;

Belenky, G. ;

Hosoda, T. ;

Kipshidze, G. ;

Suchalkin, S. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

← 1 →