Unexpected electronic properties of strained La1.85Sr0.15CuO4 epitaxial films

被引：0

作者：

Ariosa, D ^{[1
]}

Abrecht, M ^{[1
]}

Cloëtta, D ^{[1
]}

Pavuna, D ^{[1
]}

Onellion, M ^{[1
]}

Margaritondo, G ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Fac Basic Sci, IPMC, CH-1015 Lausanne, Switzerland

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期

关键词：

cuprate superconductors; electronic structure; epitaxial strain; thin films;

D O I：

10.1109/TASC.2003.811971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surprising results on electronic properties of strained thin La1.85Sr0.15CuO4 epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing T-C enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron-like.

引用

页码：2733 / 2734

页数：2

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