Unexpected electronic properties of strained La1.85Sr0.15CuO4 epitaxial films

被引：0
|
作者：
Ariosa, D [1 ]
Abrecht, M [1 ]
Cloëtta, D [1 ]
Pavuna, D [1 ]
Onellion, M [1 ]
Margaritondo, G [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Fac Basic Sci, IPMC, CH-1015 Lausanne, Switzerland
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期
关键词：
cuprate superconductors; electronic structure; epitaxial strain; thin films;
D O I：
10.1109/TASC.2003.811971
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surprising results on electronic properties of strained thin La1.85Sr0.15CuO4 epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing T-C enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron-like.
引用
收藏
页码：2733 / 2734
页数：2
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