CNT-Encapsulated β-SiC Nanocrystals: Enhanced Migration by Confinement in Carbon Channels

被引：16

作者：

Bechelany, Mikhael ^{[1
]}

Brioude, Arnaud ^{[2
]}

Bernard, Samuel ^{[1
]}

Cornu, David ^{[1
]}

Miele, Philippe ^{[1
]}

机构：

[1] Univ Montpellier 2, Inst Europeen Membranes, CNRS, UMR 5635, F-34095 Montpellier, France

[2] Univ Lyon 1, UMR 5615, CNRS, Lab Multimat & Interfaces, F-69622 Villeurbanne, France

来源：

CRYSTAL GROWTH & DESIGN | 2011年 / 11卷 / 05期

关键词：

COAXIAL NANOCABLES; NANOTUBES; NANOWIRES; METAL; NANOPARTICLES; DEPOSITION;

D O I：

10.1021/cg200065y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Batch-fabricated SiC nanowires (NWs) and SiC@C nanocables (NCs) were heated under an argon flow at high temperature (1600-1800 degrees C). The ensuing product was characterized by SEM, HRTEM, EDX and XRD. As we found, the heat treatment led to the structuring of SiC NWs, whereas SiC@C NCs were completely converted into carbon nanotubes (CNTs) encapsulating faceted beta-SiC nanocrystals. The growth mechanism of these nanostructures (NSs) was studied. The results collected in this study will enable us to better define use conditions of SiC-based ID NSs at high temperatures and to understand the effect of confinement on the migration of element during annealing. These NSs could have applications in different fields such electronic and light-emitting diode.

引用

页码：1891 / 1895

页数：5

共 33 条

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