Electrochemical and biological response of titanium (cp-Ti) after silicon ion implantation

Purpose This study/paper aims to the authors applied low "Si" ions dose over cp-Ti-2, and the potent dose level was optimized for adequate corrosion resistance and effective proliferation of stem cells. Design/methodology/approach The cp-Ti surface was modified by silicon (Si) ions beam at 0.5 MeV in a Pelletron accelerator. Three different ion doses were applied to the polished samples, and the surface was characterized by XRD and AFM analysis. Findings At moderate "Si" ion dose (6.54 x 10(12) ions-cm(-2)), the potential shifted to a noble value. The small "i(corr)" (1.22 mu A.cm(-2)) and relatively large charge transfer resistance (43.548 k omega-cm(2)) in the ringer's lactate solution was confirmed through Potentiodynamic polarization and impedance spectroscopy analysis. Compared to cp-Ti and other doses, this dose level also provided the effective proliferation of mesenchymal stem cells. Originality/value The dosage levels used were different to previous work and provided the effective proliferation of mesenchymal stem cells.