Effect of annealing temperatures on properties of sol-gel grown ZnO-ZrO2 films

被引：39
作者：
Ivanova, T. [1 ]
Harizanova, A. [1 ]
Koutzarova, T. [2 ]
Vertruyen, B. [3 ]
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria
[3] Univ Liege, Inst Chem B6, LCIS SUPRATECS, B-4000 Liege, Belgium
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2010年 / 45卷 / 11期
关键词：
thin film; sol-gel growth; oxides; optical; ZRO2; THIN-FILMS; OPTICAL-PROPERTIES; DEPOSITION;
D O I：
10.1002/crat.201000427
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Mixed ZnO-ZrO2 films have been obtained by sol-gel technology. By using spin coating method, the films were deposited on Si and glass substrates. The influence of thermal annealings (the temperatures vary from 400 degrees C to 750 degrees C) on their structural properties has been studied. The structural behavior has been investigated by the means of XRD and FTIR techniques. The results revealed no presence of mixed oxide phases, the detected crystal phases were related to the hexagonal ZnO and to crystalline ZrO2. The sol-gel ZnO-ZrO2 films showed polycrystalline structure with a certain degree of an amorphous fraction. The optical transmittance reached 91% and it diminished with increasing the annealing temperatures. The optical properties of the sol-gel ZnO-ZrO2 films, deposited on glass substrates are excellent with high transparency and better then those of pure ZrO2 films, obtained at similar technological conditions. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1154 / 1160
页数：7
相关论文
共 31 条
[1]   High frequency characterization and continuum modeling of ultrathin high-k (ZrO2) gate dielectrics on strained-Si [J].
Bera, MK ;
Chakraborty, S ;
Saha, S ;
Paramanik, D ;
Varma, S ;
Bhattacharya, S ;
Maiti, CK .
THIN SOLID FILMS, 2006, 504 (1-2) :183-187
[2]   Effect of temperature on lateral growth of ZnO grains grown by MOCVD [J].
Chen, Y. J. ;
Shih, Y. Y. ;
Ho, C. H. ;
Du, J. H. ;
Fu, Y. P. .
CERAMICS INTERNATIONAL, 2010, 36 (01) :69-73
[3]   Optical properties of ZnO/silica nanocomposites prepared by sol-gel method and deposited by dip-coating technique [J].
Djouadi, D. ;
Chelouche, A. ;
Aksas, A. ;
Sebais, M. .
PROCEEDINGS OF THE JMSM 2008 CONFERENCE, 2009, 2 (03) :701-705
[4]   Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique [J].
Dutta, M. ;
Mridha, S. ;
Basak, D. .
APPLIED SURFACE SCIENCE, 2008, 254 (09) :2743-2747
[5]   Role of the MOCVD deposition conditions on physico-chemical properties of tetragonal ZrO2 thin films [J].
Galicka-Fau, K. ;
Legros, C. ;
Andrieux, M. ;
Brunet, M. ;
Szade, J. ;
Garry, G. .
APPLIED SURFACE SCIENCE, 2009, 255 (22) :8986-8994
[6]   ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide [J].
Godlewski, M. ;
Guziewicz, E. ;
Luka, G. ;
Krajewski, T. ;
Lukasiewicz, M. ;
Wachnicki, L. ;
Wachnicka, A. ;
Kopalko, K. ;
Sarem, A. ;
Dalati, B. .
THIN SOLID FILMS, 2009, 518 (04) :1145-1148
[7]   ZnO-ZrO2 films with good UV-shielding properties prepared by a single step sol-gel method [J].
Hayashi, Hiroaki ;
Yoshida, Osamu ;
Suzuki, Hisao .
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2009, 117 (1369) :978-982
[8]   A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films [J].
Lee, B. ;
Choi, K. J. ;
Hande, A. ;
Kim, M. J. ;
Wallace, R. M. ;
Kim, J. ;
Senzaki, Y. ;
Shenai, D. ;
Li, H. ;
Rousseau, M. ;
Suydam, J. .
MICROELECTRONIC ENGINEERING, 2009, 86 (03) :272-276
[9]   A simple sol-gel route to ZrO2 films with high optical performances [J].
Liang, Liping ;
Xu, Yao ;
Wu, Dong ;
Sun, Yuhan .
MATERIALS CHEMISTRY AND PHYSICS, 2009, 114 (01) :252-256
[10]   Self-limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide [J].
Lin, Yen-Ting ;
Chung, Ping-Han ;
Lai, Hung-Wei ;
Su, Hsin-Lun ;
Lyu, Dong-Yuan ;
Yen, Kuo-Yi ;
Lin, Tai-Yuan ;
Kung, Chung-Yuan ;
Gong, Jyh-Rong .
APPLIED SURFACE SCIENCE, 2009, 256 (03) :819-822
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