Anisotropy effects on the reliability of single-crystal silicon

被引：24

作者：

Borrero-Lopez, Oscar ^{[1
,2
]}

Vodenitcharova, Tania ^{[2
]}

Hoffman, Mark ^{[2
]}

机构：

[1] Univ Extremadura, Dept Ingn Mecan Energet & Mat, E-06071 Badajoz, Spain

[2] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

来源：

SCRIPTA MATERIALIA | 2010年 / 63卷 / 10期

关键词：

Scratch test; Fracture; Elemental semiconductors; Finite element analysis; FRACTURE STRENGTH; CONTACT FRACTURE; DEFORMATION; INDENTATION; WAFERS;

D O I：

10.1016/j.scriptamat.2010.07.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Anisotropy effects on the reliability of single-crystal silicon were investigated by means of scratch tests along [1 1 0] and [1 0 0] crystallographic directions. It was found that fracture (partial cone cracks) starts along favoured {1 1 0) and {1 1 1} cleavage planes, with crack orientation varying upon the scratching direction. Moreover, the [1 0 0] direction was found to be twice as reliable as the [1 1 0] direction. Stress and phase analyses were carried out to explain this effect, which has implications for the design of silicon-based devices. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：997 / 1000

页数：4

共 17 条

[1]

*AM SOC TEST MAT, STAND PRACT REP UN S

[2]

[Anonymous], 1998, An Introduction to Mechanical Properties of Ceramics, DOI DOI 10.1017/CBO9780511623103

[3] Bulk silicon is susceptible to fatigue [J].