Low dielectric constant porous silica films formed by photo-induced sol-gel processing

被引：31

作者：

Zhang, JY ^{[1
]}

Boyd, IW ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2000年 / 3卷 / 5-6期

关键词：

photo-assisted sol-gel processing; excimer lamp; porous SiO(2) film; low dielectric constant;

D O I：

10.1016/S1369-8001(00)00054-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of porous silicon dioxide films on Si (100) and quartz substrates at low temperatures (25-300 degreesC) by photo-induced sol-gel processing using 172 nm radiation from an excimer lamp has been investigated. The effects of substrate temperature, total gas pressure and lamp exposure time on the properties of the film formed have been studied using ellipsometry, UV spectrophotometry and Fourier transform infrared spectroscopy (FTIR). The FTIR spectra revealed a Si-O-Si stretching vibration peak at 1070cm(-1) after UV irradiation at 200 degreesC which is similar to that recorded for oxides grown thermally at temperatures between 600 and 1000 degreesC. The films exhibited optical transmittance of around 90% in the visible and UV region of the spectrum. Capacitance measurements indicated that the dielectric constant of the films strongly depended on the substrate temperature during irradiation. Dielectric constant values as low as 1.7 are readily achievable at room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：345 / 349

页数：5

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