Energy selective scanning electron microscopy to reduce the effect of contamination layers on scanning electron microscope dopant mapping

被引：33
作者：
Rodenburg, C. [1 ]
Jepson, M. A. E. [1 ]
Bosch, E. G. T. [2 ]
Dapor, M. [3 ,4 ,5 ]
机构：
[1] Univ Sheffield, Dept Mat Engn, Sheffield S1 3JD, S Yorkshire, England
[2] FEI Electron Opt, NL-5600 KA Eindhoven, Netherlands
[3] FBK, Interdisciplinary Lab Computat Sci LISC, I-38123 Povo, Trento, Italy
[4] Univ Trento, I-38123 Povo, Trento, Italy
[5] Univ Trento, I-38123 Trento, Italy
来源：
ULTRAMICROSCOPY | 2010年 / 110卷 / 09期
基金：
英国工程与自然科学研究理事会;
关键词：
Energy selective SEM; Dopant mapping; Detector transfer modelling; Silicon; MONTE-CARLO CALCULATION; EMISSION; OXIDE; SEM;
D O I：
10.1016/j.ultramic.2010.04.008
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
We demonstrate that energy selective scanning electron microscopy can lead to substantial dopant contrast and resolution improvements (compared to standard SEM) when the energy selection is carried out based on Monte Carlo modelled secondary electron spectra in combination with detector transfer modelling. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1185 / 1191
页数：7
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