Polymorphous silicon thin films produced in dusty plasmas:: application to solar cells

被引:56
作者
Cabarrocas, PRI [1 ]
Chaâbane, N [1 ]
Kharchenko, AV [1 ]
Tchakarov, S [1 ]
机构
[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, UMR 7647, F-91128 Palaiseau, France
关键词
D O I
10.1088/0741-3335/46/12B/020
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.
引用
收藏
页码:B235 / B243
页数:9
相关论文
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