Structure-Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene

被引：56

作者：

Li, Zhiqiang ^{[1
,2
]}

Lui, Chun Hung ^{[1
,2
]}

Cappelluti, Emmanuele ^{[3
,4
]}

Benfatto, Lara ^{[4
,5
]}

Mak, Kin Fai ^{[1
,2
]}

Carr, G. L. ^{[6
]}

Shan, Jie ^{[7
]}

Heinz, Tony F. ^{[1
,2
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[3] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[4] CNR, UOS Sapienza, Ist Sistemi Complessi, I-00185 Rome, Italy

[5] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[6] Brookhaven Natl Lab, Upton, NY 11973 USA

[7] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 15期

基金：

美国国家科学基金会;

关键词：

BAND-GAP; TRILAYER; STACKING; FIELD;

D O I：

10.1103/PhysRevLett.108.156801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order.

引用

页数：5

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