Epitaxial growth of β-Si3N4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111)

被引：13

作者：

Yamabe, Nobuhiko ^{[1
]}

Yamamoto, Yuka ^{[1
]}

Ohachi, Tadashi ^{[1
]}

机构：

[1] Doshisha Univ, Kyotanabe 6100321, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 | 2011年 / 8卷 / 05期

关键词：

MBE; AlN; Si substrate; polarity; ALUMINUM NITRIDE; SILICON-NITRIDE; INITIAL-STAGES; SI(111); ALN; SURFACE; FILMS; GAN;

D O I：

10.1002/pssc.201000900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fabrication process of an interface reaction epitaxy (IRE) beta-Si3N4 and an IRE AlN were investigated to produce a double buffer layer (DBL) of AlN(0001)/beta-Si3N4/Si(111) for the growth of group III nitrides films on Si. The beta-Si3N4 was formed by using adsorbed (ADS) nitrogen atoms irradiated indirectly from a rf-plasma cell. Two surface structures of the beta-Si3N4, which were "8 x 8" and "8/3 x 8/3" reconstructions, were fabricated by changing the nitrogen irradiation conditions; complete and incomplete nitridation of Si surface and successive heat treatment up to 875 degrees C formed the "8 x 8" and "8/3 x 8/3" structures, respectively. IRE AlN was grown by 1 monolayer of Al deposition on the beta-Si3N4 and successive annealing at 875 degrees C. Al and N polarity DBLs were grown on the "8 x 8" and "8/3 x 8/3" structures, respectively. These results indicated that the polarity of DBL could be controlled by the surface reconstruction of beta-Si3N4. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1552 / 1555

页数：4

共 22 条

[1] Structure determination of the Si3N4/Si(111)-(8 x 8) surface:: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations [J].