High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 μm

被引:12
|
作者
Gupta, J. A. [1 ]
Bezinger, A. [1 ]
Barrios, P. J. [1 ]
Lapointe, J. [1 ]
Poitras, D. [1 ]
Waldron, P. [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
ROOM-TEMPERATURE; I LASERS; OPERATION; BARRIERS;
D O I
10.1049/el.2012.0109
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A lateral etched-grating process was used to produce singlemode distributed feedback laser diodes at 3.23 mu m. The devices are based on InGaAsSb/AlInGaAsSb type-I quantum well active regions grown on GaSb substrates by molecular beam epitaxy. The lasers were used in high-resolution spectroscopy of methane gas near the nu(3), R-7 vibrational absorption transitions.
引用
收藏
页码:396 / U135
页数:2
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