Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption

被引：13

作者：

Tereshchenko, O. E. ^{[1
,2
]}

Paget, D. ^{[3
]}

Toropetsky, K. V. ^{[1
]}

Alperovich, V. L. ^{[1
,2
]}

Eremeev, S. V. ^{[4
,5
]}

Bakulin, A. V. ^{[4
,5
]}

Kulkova, S. E. ^{[4
,5
]}

Doyle, B. P. ^{[6
,7
]}

Nannarone, S. ^{[6
,8
,9
]}

机构：

[1] Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 636090, Russia

[3] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[4] Inst Strength Phys & Mat Sci, Tomsk 636021, Russia

[5] Tomsk State Univ, Tomsk 634050, Russia

[6] INFM CNR, Lab Nazl TASC, I-34012 Trieste, Italy

[7] Univ Johannesburg, ZA-2006 Auckland Pk, South Africa

[8] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[9] CNISM, I-41100 Modena, Italy

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2012年 / 116卷 / 15期

基金：

俄罗斯基础研究基金会;

关键词：

001; SURFACES; I-2; IODINE; GAAS; EPITAXY; ENERGY; ATOMS; INAS; INSB;

D O I：

10.1021/jp211360d

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experimentally and by ab initio calculations it is shown that adsorption of electropositive cesium on the As-rich surface of GaAs(001) and, in a symmetric fashion, adsorption of electronegative iodine on the Ga-rich surface, induce a decrease of the surface stability, thus facilitating surface etching. Conversely, Cs adsorption on the Ga-rich surface and I adsorption on the As-rich surface lead to an increased surface stability. Etching occurs when adsorption-induced charge transfer weakens the backbonds of the top arsenic atoms for the case of Cs on the As-rich beta 2(2 x 4) surface and the lateral bonds in the topmost surface layer for I on the Ga-rich zeta(4 X 2) surface. The possibilities of reversible transitions between the two reconstructed surfaces and of atomic layer etching with monolayer precision are demonstrated.

引用

页码：8535 / 8540

页数：6

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