Valley detection using a graphene gradual pn junction with spin-orbit coupling: An analytical conductance calculation

被引：5

作者：

Yang, Mou ^{[1
]}

Wang, Rui-Qiang ^{[1
]}

Bai, Yan-Kui ^{[2
,3
]}

机构：

[1] S China Normal Univ, Sch Phys & Telecommun Engn, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China

[2] Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050024, Hebei, Peoples R China

[3] Hebei Normal Univ, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Hebei, Peoples R China

来源：

PHYSICS LETTERS A | 2015年 / 379卷 / 30-31期

关键词：

Graphene; pn junction; Spin-orbit coupling; Valley-dependent transport; N-JUNCTION;

D O I：

10.1016/j.physleta.2015.04.043

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin-orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists of two Gaussian peaks - one valley contributes one peak. The latter feature allows one to detect the valley polarization without using double-interface resonant devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：1732 / 1736

页数：5

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