Wideband Input Matching CMOS Low-Noise Amplifier with Noise and Distortion Cancellation

被引:2
作者
Tarighat, Asieh Parhizkar [1 ]
Yargholi, Mostafa [1 ]
机构
[1] Univ Zanjan, Dept Elect Engn, Zanjan, Iran
关键词
Resistive feedback LNA; noise cancellation; linearity; EMPLOYING NOISE; FEEDBACK; GAIN;
D O I
10.1142/S0218126620500590
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a wideband low-noise amplifier (LNA) is designed based on the resistive feedback topology with a TSMC 0.18 mu m standard RF CMOS process. Bandwidth expansion is provided by the second-order Chebyshev filter. The noise figure (NF) increases at high frequency because of the source parasitic capacitors of the cascode transistor; so, noise cancelling technique is applied to the cascode transistor of the proposed LNA. Bias conditions and sizes of the transistors are optimized to cancel the nonlinear transconductance (g(m)', g(m)'). With this modified technique, low noise figure, high linearity and improved input and output matching can be attained for 3.1-10.6 GHz frequency band. Post-layout simulation result of the proposed LNA shows the maximum power gain of 17 dB at 5.5 GHz frequency, NF of lower than 4.5 dB over the whole band of 3.1-10.6 GHz, maximum IIP2 of +28 dBm and IIP3 of +7.5 dBm, while dissipating 9 mW (with buffer) from a 1.8 V supply voltage. It occupies 773.3 mu m x 676 mu m silicon die area.
引用
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页数:15
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