Annealing-induced-type conversion of GaInNAs

被引：22

作者：

Kurtz, S ^{[1
]}

Geisz, JF ^{[1
]}

Friedman, DJ ^{[1
]}

Metzger, WK ^{[1
]}

King, RR ^{[1
]}

Karam, NH ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 05期

关键词：

D O I：

10.1063/1.1643775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When grown by metalorganic chemical vapor deposition (MOCVD), nominally undoped GaInNAs is commonly observed to have an acceptor concentration of similar to10(17) cm(-3). However, after annealing in the MOCVD reactor at a temperature of 650degreesC, p-type GaInNAs sometimes converts to n type with an electron concentration of similar to10(17) cm(-3). This n-type material has a slightly higher electron mobility (similar to400-450 cm2/V s) than has usually been reported for 1 eV GaInNAs. Secondary ion mass spectroscopy shows significant hydrogen and some carbon contamination of these layers. The type conversion is correlated with both the nitrogen and hydrogen concentration and is relatively insensitive to the choice of growth precursors (trimethylgallium versus triethylgallium, or unsymmetric dimethylhydrazine versus nitrogen trifluoride). The data are consistent with theoretical predictions that the donors arise from a N-H complex. Annealing in the absence of hydrogen reduces the background acceptor concentration, but does not produce an electron concentration as high as 10(17) cm(-3). (C) 2004 American Institute of Physics.

引用

页码：2505 / 2508

页数：4

共 25 条

[1] Heterojunction bipolar transistors implemented with GaInNAs materials [J].