Depth profiling of carbon in silicon using the 12C(p,p′γ) reaction

被引：3

作者：

Yasuda, K. ^{[1
]}

Ishigami, R. ^{[1
]}

Sasase, M. ^{[1
]}

Ito, Y. ^{[1
]}

机构：

[1] WERK, Dept Res & Dev, Tsuruga, Fukui 9140192, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 08期

关键词：

carbon analysis; depth profile; inelastic scattering; p-gamma coincidence;

D O I：

10.1016/j.nimb.2008.02.010

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An analytical method has been developed for the measurement of a carbon depth profile of the region a few tens of mu m from the surface, using a (12)C(p, p'gamma) reaction. Measurements for a SiC sample coated with a silicon layer and a carbon-implanted silicon sample were performed using this method. Two charged particle detectors and two gamma-ray detectors were utilized for the coincident detection of scattered protons and gamma-rays from the first excited state (E(x) = 4.4 MeV) of (12)C. The measured depth profiles agree well with results obtained using a surface profiler and an Auger microprobe. These results demonstrate that this method is useful for the non-destructive analysis of carbon at depths of a few tens of mu m from the surface. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1416 / 1420

页数：5

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