Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition

被引:259
|
作者
Lee, CJ [1 ]
Park, J
Huh, Y
Lee, JY
机构
[1] Kunsan Natl Univ, Sch Elect Engn, Kunsan 573701, South Korea
[2] Korea Univ, Dept Chem, Jochiwon 339700, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
D O I
10.1016/S0009-2614(01)00680-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950 degreesC. As the growth temperature increases from 750 degreesC to 950 degreesC, the growth rate increases by four times and the average diameter also increases from 30 mn to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950 degreesC. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:33 / 38
页数:6
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