An improved bidirectional SCR structure for low-triggering ESD protection applications

被引：50

作者：

Liu, Zhiwei ^{[1
]}

Vinson, Jim ^{[2
]}

Lou, Lifang ^{[1
]}

Liou, Juin J. ^{[1
,3
]}

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

[2] Intersil Corp, Corp Proc Reliabil Grp, Palm Bay, FL 32905 USA

[3] Zhejiang Univ, Dept Informat & Elect Engn, Hangzhou 310027, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 04期

关键词：

bidirectional electrostatic discharge (ESD) protection; holding voltage; latch-up immunity; triggering voltage;

D O I：

10.1109/LED.2008.917111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mu m bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.

引用

页码：360 / 362

页数：3

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