Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation

被引：11

作者：

Rochdi, N. ^{[1
]}

Liudvikouskaya, K. ^{[2
]}

Descoins, M. ^{[1
]}

Raissi, M. ^{[1
]}

Coudreau, C. ^{[1
]}

Lazzari, J. -L. ^{[1
]}

Oughaddou, H. ^{[3
,4
]}

D'Avitaya, F. Arnaud ^{[1
]}

机构：

[1] Univ Aix Marseille, Ctr Interdisciplinaire Nanosci Marseille CINaM, CNRS, UPR 3118, F-13288 Marseille 9, France

[2] Belarusian State Univ Informat & Radioelect, Minsk 220013, BELARUS

[3] DSM IRAMIS SPCSI, Commissariat Energie Atom, F-91191 Gif Sur Yvette, France

[4] Univ Cergy Pontoise, LAMAp, F-95000 Cergy Pontoise, France

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 19期

关键词：

Magnesium oxide; Diffusion; Silicon; High-Resolution Transmission Electron; Microscopy; Atomic Force Microscopy; Ultra-thin films; Atomic layer deposition oxidation; Low-energy electron diffraction; ELECTRICAL SPIN INJECTION; FILMS; FUNDAMENTALS; SPINTRONICS;

D O I：

10.1016/j.tsf.2011.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultra-thin magnesium oxide layers were elaborated by atomic layer deposition and oxidation process on silicon (100) starting from (2 x 1) thermally-reconstructed or hydrogen-terminated Si surfaces. Low-energy electron diffraction experiments show (2 x 3) and (3 x 3) reconstructions while depositing a magnesium monolayer on Si clean surfaces, and a 3-dimentional growth of the oxide as confirmed by ex-situ atomic force microscopy. For hydrogen-terminated or clean surfaces previously physisorbed by oxygen, uniform cobalt/magnesium-oxide/silicon stacks of layers are observed by transmission electron microscopy. Annealing above 150 degrees C leads to MgO dissolution and formation of an interfacial complex compound by inter-diffusion of Si and Co. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：6302 / 6306

页数：5

共 28 条

[1] Electronic measurement and control of spin transport in silicon [J].

Appelbaum, Ian ;

Huang, Biqin ;

Monsma, Douwe J. .

NATURE, 2007, 447 (7142) :295-298

[2] Growth of highly oriented Pb(Zr,Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors [J].

Basit, NA ;

Kim, HK ;

Blachere, J .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3941-3943

[3] Reactive sputtering of magnesium oxide thin film for plasma display panel applications [J].

Choi, YW ;

Kim, J .

THIN SOLID FILMS, 2004, 460 (1-2) :295-299

[4] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[5] Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer [J].

El Asri, T. ;

Raissi, M. ;

Vizzini, S. ;

El Maachi, A. ;

Ameziane, E. L. ;

d'Avitaya, F. Arnaud ;

Lazzari, J. -L. ;

Coudreau, C. ;

Oughaddou, H. ;

Aufray, B. ;

Kaddouri, A. .

APPLIED SURFACE SCIENCE, 2010, 256 (09) :2731-2734

[6] Magnetic bipolar transistor [J].

Fabian, J ;

Zutic, I ;

Das Sarma, S .

APPLIED PHYSICS LETTERS, 2004, 84 (01) :85-87

[7] Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420 [J].

Fert, A ;

Jaffrès, H .

PHYSICAL REVIEW B, 2001, 64 (18)

[8]

HANDBICKI AT, 2002, APPL PHYS LETT, V80, P1240, DOI DOI 10.1063/1.1449530

[9] Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100) [J].

Jiang, X ;

Wang, R ;

Shelby, RM ;

Macfarlane, RM ;

Bank, SR ;

Harris, JS ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2005, 94 (05)

[10] SURFACE-STRUCTURES OF THE MG/SI(100) SYSTEM STUDIED BY LOW-ENERGY-ELECTRON DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPY [J].

KAWASHIMA, Y ;

TANABE, H ;

IKEDA, T ;

ITOH, H ;

ICHINOKAWA, T .

SURFACE SCIENCE, 1994, 319 (1-2) :165-171

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