Photoinduced effect on carrier transport properties in La0.7Sr0.3MnO3/Si heterostructure

被引：23

作者：

Jin, K. X. ^{[1
]}

Zhao, S. G. ^{[2
]}

Tan, X. Y. ^{[1
]}

Chen, C. L. ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Dept Appl Phys, Xian 710072, Peoples R China

[2] Xian Univ Sci & Technol, Dept Basic Sci, Xian 710054, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 04期

关键词：

D O I：

10.1088/0022-3727/41/4/045105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoinduced effect on carrier transport properties has been investigated in the La0.7Sr0.3MnO3/Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-toplane (CPP) geometry of the heterostructure has been observed when it is irradiated by a 532 nm laser at T = 270 K. The rising time of about 100 mu s in the CPP geometry of the heterostructure under modulated laser irradiation of 200 mu s duration seems to be independent of temperature. This provides an innovation for potential application in functional optical and electrical devices.

引用

页数：4

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