Optical and electrical properties of vanadium doped Indium oxide thin films

被引：27

作者：

Li, Huibin ^{[1
]}

Wang, Ning ^{[1
]}

Liu, Xingyuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 01期

关键词：

D O I：

10.1364/OE.16.000194

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new transparent conducting indium vanadium oxide (IVO) thin film is developed by using a modification-specific reactive thermal coevaporation method. Electrical and optical characteristics of IVO films were studied with different vanadium doping concentration, which shows good optical transmittance in the visible spectra range and a minimum electrical resistivity of 7.95x10(-4) Omega.cm corresponding to a carrier density of 2.28x10(20) cm(-3) and a Hall mobility of 34.5 cm(2) V-1 s(-1), respectively. Using IVO film as the anode, OLED shows a reduced turn-on voltage and significantly enhanced luminance and electroluminescence efficiency with respect to the device with an ITO anode. Our results indicate that IVO is a promising transparent conducting oxide material, and a suitable electrical contact for hole injection in OLEDs. (c) 2008 Optical Society of America.

引用

页码：194 / 199

页数：6

共 18 条

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