High-performance nanowire electronics and photonics and nanoscale patterning on flexible plastic substrates

被引:119
作者
Mcalpine, MC [1 ]
Friedman, RS
Lieber, CM
机构
[1] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
flexible electronics; light-emitting diodes; nano-imprint lithography (NIL); nanoscale patterning; nanowire (NW) transistors; plastic substrates; silicon nanowires (NWs);
D O I
10.1109/JPROC.2005.850308
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The introduction of an ambient-temperature route for integrating high-mobility semiconductors on flexible substrates could enable the development of novel electronic and photonic devices with the potential to impact a broad spectrum of applications. Here we review our recent studies demonstrating that high-quality single-crystal nanowires (NWs) can be assembled onto flexible plastic substrates under ambient conditions to create FETs and light-emitting diodes. We also show that polymer substrates can be patterned through the use of a room temperature nanoimprint lithography technique for the general fabrication of hundred-nanometer scale features, which can be hierarchically patterned to the millimeter scale and integrated with semiconductor NWs to make high-performance FETs. The key to our approach is the separation of the high-temperature synthesis of single-crystal NWs from room temperature solution-based assembly, thus enabling fabrication of single-crystal devices on virtually any substrate. Silicon NW FETs on plastic substrates display mobilities of 200 cm(2)-V (-1)-s(-1), rivaling those of single-crystal silicon and exceeding those of state-of-the-art amorphous silicon and organic transistors currently used for flexible electronics. Furthermore, the generality of this bottom-up assembly approach suggests the integration of diverse nanoscale building blocks on a variety of substrates, potentially enabling far-reaching advances in lightweight display, mobile computing, and information storage applications.
引用
收藏
页码:1357 / 1363
页数:7
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