Recent status of white LEDs and nitride LDs

被引：21

作者：

Miyoshi, Takashi ^{[1
]}

Yanamoto, Tomoya ^{[1
]}

Kozaki, Tokuya ^{[1
]}

Nagahama, Shin-ichi ^{[1
]}

Narukawa, Yukio ^{[2
]}

Sano, Masahiko ^{[2
]}

Yamada, Takao ^{[3
]}

Mukai, Takashi ^{[1
,2
]}

机构：

[1] Nichia Corp, Optoelect Prod Div, LD Dev Dept, 491 Oka, Tokushima 7748601, Japan

[2] Nichia Corp, Opto Elect Product Div, Nitride Semicond Res Lab, Tokushima 7748601, Japan

[3] Nichia Corp, Opto Elect Product Div, LED Dev Dept, Tokushima 7748601, Japan

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES III | 2008年 / 6894卷

关键词：

LED; white; efficiency; LD; 488nm;

D O I：

10.1117/12.764404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated two types of high luminous efficiency white light emitting diodes (LEDs). The first one is the white LED, which had a high luminous efficiency (eta(L)) of 161 Lm/W with the high luminous flux (phi(v)) of 9.89 Lm at a forward-current of 20 mA. Used blue LED had a high output power (phi(e)) of 42.2 mW and high external quantum efficiency (eta(ex)) of 75.5%. The second one is the luminous-efficiency-maximized white-LED with a low forward-bias voltage (V-f) of 2.80 V, which is almost equal to the theoretical limit, eta(L) and wall-plug efficiency (ATE) were 169 Lm/W and 50.8%, respectively, at 20 mA. They were approximately twice higher than those of a tri-phosphor fluorescent lamp (90 Lm/W and 25%). Moreover, we succeeded in fabricating longer wavelength laser diodes (LDs) with an emission wavelength of 488 nm under CW current condition by optimizing the growth conditions and structure of LDs. To our knowledge, this wavelength is the longest for under CW operation of GaN-based LDs.

引用

页数：7

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