Influence of WC-Co Substrate Pretreatment on Diamond Film Deposition by Laser-Assisted Combustion Synthesis

被引:22
|
作者
Veillere, Amelie [1 ,2 ]
Guillemet, Thomas [1 ,2 ]
Xie, Zhi Qiang [1 ]
Zuhlke, Craig A. [1 ]
Alexander, Dennis R. [1 ]
Silvain, Jean-Francois [2 ]
Heintz, Jean-Marc [2 ]
Chandra, Namas [3 ]
Lu, Yong Feng [1 ]
机构
[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
[2] Univ Bordeaux, CNRS, ICMCB, F-33608 Pessac, France
[3] Univ Nebraska, Dept Mech Engn, Lincoln, NE 68588 USA
关键词
diamond; substrate pretreatment; chemical and laser etchings; cobalt diffusion; residual stress; Raman spectroscopy; CHEMICAL-VAPOR-DEPOSITION; SURFACE; INTERFACES; COATINGS; STRESSES; GROWTH; CVD;
D O I
10.1021/am101271b
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.
引用
收藏
页码:1134 / 1139
页数:6
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